Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces
نویسندگان
چکیده
منابع مشابه
Recent Developments in Scanning Tunneling Spectroscopy of Semiconductor Surfaces
Several recent developments in scanning tunneling spectroscopy (STS) of semiconductor surfaces are reviewed. First, the normalization of spectra is discussed, which for the Si(111)2×1 surface is found to produce a small shift in the apparent position of band edges. With this correction, the surface band gap measured by STS is found to be in good agreement with that obtained by other experimenta...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1998
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.121139